PART |
Description |
Maker |
D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202 TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 6A条一(c)| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
2SB1418/2SB1418A 2SB1418AQ 2SB1418P |
2SB1418. 2SB1418A - PNP Transistor Darlington TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 80V的五(巴西)总裁|甲一(c)|21VAR TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 2A I(C) | TO-221VAR 晶体管|晶体管|达林顿|进步党| 60V的五(巴西)总裁|甲一(c)|21VAR
|
Atmel, Corp. Amphenol, Corp.
|
2SD768K |
Silicon NPN Darlington Transistor TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 6A I(C) | TO-220AB
|
Hitachi Semiconductor
|
FXT2907SM FXT605SM |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | SO TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|达林顿| npn型| 120伏特五(巴西)总裁| 1A条一(c)|
|
Electronic Theatre Controls, Inc.
|
2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
|
NEC Corp. NEC, Corp.
|
CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
2SD986 2SD985 2SD986L |
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 1.5AI(丙)|26 NPN SILICON DARLINGTON POWER TRANSISTORS
|
NEC[NEC]
|
2N6649E3 2N6648E3 |
BJT( BiPolar Junction Transistor) Darlington Transistors
|
Microsemi
|
2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36 Open-Drain SOT µP Reset Circuit TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 60mA的一(c)|1 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五(巴西)总裁| 350mA的一(c)| TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五(巴西)总裁| 10A条一(c)|个STR - 1 / 4 Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237 TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五(巴西)总裁|37 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
IR2403 |
TRANSISTOR,BJT,ARRAY,DARLINGTON,45V V(BR)CEO,400MA I(C),DIP From old datasheet system
|
Sharp Corp
|